Aluminum Nitride Wafers
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Product Description:
Aluminum nitride ceramic substrate, high thermal conductivity, low coefficient of expansion, high strength, high temperature resistance, chemical resistance, high resistivity , low dielectric loss, is the ideal LSI heat dissipation board and packaging materials.
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.
ALN ceramics use heat resistant melt erosion and thermal shock resistance, can produce GaAs crystal crucible, Al evaporation pan, MHD power generation equipment and high temperature turbine corrosion resistant parts, using its optical properties can be used as an infrared window.
Size details:
Aluminum Nitride Substrate Size
Item NO.
Diameter
(mm)
Thickness
(mm)
Purity
Item NO.
Diameter
(mm)
Thickness
(mm)
Purity
CS-AlN-B032
10
1
99%
CS-AlN-B049
50
2
99%
CS-AlN-B033
15
1.5
99%
CS-AlN-B050
52
2
99%
CS-AlN-B034
18
0.5
99%
CS-AlN-B051
72.6
0.6
99%
CS-AlN-B035
30
1
99%
CS-AlN-B052
100
0.38
99%
CS-AlN-B036
35
1.5
99%
CS-AlN-B053
100
0.5
99%
CS-AlN-B037
40
1
99%
CS-AlN-B054
100
1.5
99%
CS-AlN-B038
40
1.5
99%
CS-AlN-B055
100
2
99%
CS-AlN-B039
40
2
99%
CS-AlN-B056
129.5
0.635
99%
CS-AlN-B040
45
1.5
99%
CS-AlN-B057
45
1
99%
CS-AlN-B041
45
2
99%
CS-AlN-B058
26
2
99%
CS-AlN-B042
50
0.38
99%
CS-AlN-B059
76.2
0.6
99%
CS-AlN-B043
50
0.5
99%
CS-AlN-B060
80
1
99%
CS-AlN-B044
50
1
99%
CS-AlN-B061
14
0.385
99%
CS-AlN-B045
50
1.5
99%
CS-AlN-B062
52
1
99%
CS-AlN-B046
20
1
99%
CS-AlN-B063
52
1.5
99%
CS-AlN-B047
26
1
99%
CS-AlN-B064
26
1.5
99%
CS-AlN-B048
30
0.5
99%
CS-AlN-B065
6
1
99%
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Features:
1) A variety of specifications available.
2) Satisfy various technical request
3) Lower medium spoilage
4) Good insulation performance and high temperature resistance
5) Stiffness texture
6) Used in all electric products, electric heating products and wear resistant machinery parts.
Applications:
High-power circuits, RF and microwave circuits, GaAs crystal crucible, Al evaporation pan, MHD power generation equipment.
Properties:
Alumina Nitride (AlN)
Item
AlN180
AlN200
AlN220
Unit
Colour
Gray
Gray
Beige
Density
3.3
3.3
3.28
g/cm3
Flexural Strength
&#;350
&#;350
&#;350
MPa
Compressive Strength
-
MPa
Elastic Modulus
320
320
320
GPa
Vickers Hardness (Load 500g)
10
9.5
9
HV0.5
Coefficient of Line Thermal Expansion
4.8
4.6
4.5
10
-6
K
-1
Thermal Conductivity(20
&#;
)
180
200
220
W/m
·
K
Volume Resistance at 20°C
>10
14
>10
14
>10
13
cm
Dielectric Strength
&#;15
&#;15
&#;15
KV/mm
Dielectric Constant (1MHz)
9
8.8
8.6
εr
Loss Tangent
5
5
3
10
-4
Production Process:
Packing:
Our Certificate:
FAQ
Q1: What is Aluminum Nitride(AlN)?
Aluminum Nitride (AlN) is a covalently bonded ceramic material formed from the two abundant elements, aluminum and nitrogen. It is highly stable in an atmosphere that is inert at temperatures over °C and has a remarkable combination of properties, boasting high thermal conductivity and strong dielectric strength.T his makes it an indispensable material for thermal management and electrical applications.
Q2: What is Aluminium Nitride used for?
a. Heat sinks & Heat spreaders
b. Electrical insulators
c. Chucks and clamp rings for semiconductor processing equipment
d. Silicon wafer handling and processing
e. Substrates for electronic packages
f. Chip carriers for sensors and detectors
g. Laser heat management components
h. Molten metal fixtures
i. Packaging for microwave devices
Q3: Why is AlN a favored material for substrate and thermal management applications?
Aluminum Nitride is a one-of-a-kind ceramic material that offers both excellent thermal conductivity and high electrical resistivity. While Beryllium Oxide and cubic Boron Nitride also possess high thermal conductivity, usage of BeO is limited due to its toxicity and it is quite challenging to manufacture c-BN.
The capacity of a material to move heat while under the effect of a temperature differential is known as "thermal conductivity". In dielectrics such as AlN, heat transmission happens through lattice oscillations (or "phonons"). Elements having a straightforward composition, covalent bonding and low atomic mass normally demonstrate elevated thermal conductivity.
The thermal conductivity of a material is impacted by elements that hamper phonon dissemination. Such factors include temperature, impurities, pore size and placement, grain size, compositional homogeneity and alignment, all of which can significantly affect the lattice vibrations and, subsequently, the thermal conductivity.
The thermal conductivity of aluminium nitride, theoretically, is approximately 280 Wm-1K-1. The real thermal conductivity, on the other hand, is dependent on the processing parameters and the raw material quality. The incorporation of oxygen impurities into the lattice is a great disadvantage; as oxygen displaces nitrogen in the lattice, it forms vacancies that impede phonon propagation and scatter the phonons, thus leading to a decrease in thermal conductivity.
Q4. What information should we supply to get a quote?
Please offer the specification of ceramic boat for furnace, such as shape, dimension, quantity, application etc.
Q5. What type or material should we choose?
If you are not sure about the type/material needed, please kindly supply more details about working condition and application. Then our technical staff will check and offer you the most suitable type or material.
Q6. How can we place an order?
You can contact any sale person by , Skype, , WeChat and so on.
And more details of the products you supplied will be helpful to get the targeted responses.
Q7. How long our order can be finished?
A mass of semi-finished products and standard sizes are available in stock, and according to the final confirm with the sales for bulk production or customized products.
Q8. What do you do on quality control?
For every batch, each step and finished products will be inspected when producing by QC department.
Q9. How can we get the sample?
Free samples can be supplied after communication, but freight is for your account.
Q10. Can you accept OEM/ODM?
Yes, your goods will be produced exactly according to your drawings or inquiry.
Contact information:
Ella Yu
:
: -731- Fax: -731-
Mobile / / WeChat: -
ADD
: Chashan Town Liling City Hunan Province ,China.
More Aluminum Nitride Substrate picture:
These are the key concepts you need to understand to accurately answer the question.
The Arrhenius equation is crucial for understanding how temperature affects the rate processes like diffusion in materials such as silicon. It tells us that the rate of a chemical process increases exponentially with temperature.Mathematically expressed, the Arrhenius equation is: \[ D = D_0 \times e^{\frac{-Q_d}{kT}} \]In this formula,The \(e^{\frac{-Q_d}{kT}}\) term shows the exponential relationship between the diffusion rate and temperature. A higher temperature \(T\) means that the exponent is less negative, increasing the diffusion coefficient \(D\), and thus the rate at which atoms, such as Aluminum in our exercise, will spread out into the silicon lattice.This relation is instrumental not just in theoretical calculations, but also for practitioners designing semiconductor devices where precise control of diffusion processes is necessary for functionality.
The predeposition process in silicon doping refers to the initial step where dopants (such as Aluminum) are introduced onto the silicon surface to achieve a desired surface concentration. This is typically done at a lower temperature than the subsequent drive-in process to allow dopants to settle on the surface without driving them deep into the silicon wafer.
A steady-state condition is assumed where the surface concentration remains constant during the process. The aluminum atoms will diffuse from the high concentration on the surface into the silicon to create a gradient, which is how materials naturally even out concentration differences.
Using the Arrhenius equation, you can calculate the required predeposition time to achieve a certain concentration at a specific depth by taking into account the diffusion coefficient \(D\) at the process temperature. In the exercise, a diffusion time calculation is required at \(950^{\text{\textdegree}}C\), with a known constant surface concentration, for the dopant atoms to settle just at the surface of the silicon wafer before the drive-in process ensues.
After the predeposition phase, the 'drive-in' heat treatment follows. This is the step where the dopant atoms that have been deposited on the surface of the silicon are driven deeper into the material. This process uses a higher temperature than predeposition to increase the diffusion rate as per the Arrhenius equation.
The purpose of drive-in is to achieve a desired dopant profile throughout the silicon wafer, which is critical for creating junctions in semiconductor devices. The longer and hotter the drive-in process, the deeper the dopants diffuse into the silicon.
In our problem's context, the drive-in diffusion treatment at \(^{\text{\textdegree}}C\) for 4 hours results in a junction depth of \(3.0 \text{\textmu}m\). The relationship between time, temperature, and depth achieved is again predictable by the Arrhenius equation and understanding of the physics underlying diffusion in solid materials.
The diffusion coefficient, denoted by \(D\), is a measure of how quickly atoms or molecules can move through a material. It's a critical parameter in the semiconductor manufacturing process because it influences how dopants spread within the silicon wafer.
In our exercise, the diffusion coefficient depends on the temperature and must be calculated for both predeposition and drive-in processes using the Arrhenius equation. The coefficient \(D\) changes with temperature because atomic vibrations and movements are more vigorous at higher temperatures, creating more opportunities for atoms to hop into adjacent positions in the crystalline silicon lattice.
The pre-exponential factor \(D_0\) and the activation energy for diffusion \(Q_d\) are material-specific constants that should be determined experimentally. They form part of the Arrhenius equation, which allows us to compute the diffusion coefficient for any temperature, providing that the temperature is above absolute zero and within a range where the material's properties do not change significantly.
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